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Properties of the SG01D–5LENS UV photodiodeBroadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection
Radiation sensitive area A = 11,0 mm2
TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10µW/cm2 peak radiation results a current of approx. 350 nA
about the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170'C (338'F). The temperature coefficient of signal responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).
