The HMC788ALP2E is a GaAs pHEMT MMIC Low Noise Amplifier that operates from 5 GHz to 7 GHz. It features high gain, low noise figure, and excellent linearity, making it suitable for a wide range of RF and microwave applications.

 

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

 

Vdd: Positive power supply

GND: Ground connection

Vbias: Bias voltage connection

RFin: RF input

RFout: RF output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HMC788ALP2E for a visual representation.

 

Key Features

Wide Frequency Range: Operates from 5 GHz to 7 GHz, suitable for various RF and microwave applications.

High Gain: Provides high gain to amplify weak signals effectively.

Low Noise Figure: Features a low noise figure for improved signal-to-noise performance.

Excellent Linearity: Offers excellent linearity to maintain signal integrity in high-frequency systems.

GaAs pHEMT Technology: Utilizes GaAs pHEMT technology for high performance and reliability.

Note: For detailed technical specifications, please refer to the HMC788ALP2E datasheet.

 

Application

Wireless Communication Systems: Ideal for use in wireless communication systems requiring low noise amplification.

Radar Systems: Suitable for radar systems that demand high gain and signal integrity.

Satellite Communication: Used in satellite communication systems for signal amplification in the 5-7 GHz range.

Functionality

 

The HMC788ALP2E is a high-performance Low Noise Amplifier designed to amplify RF signals in the 5-7 GHz frequency range with low noise figure and high linearity, ensuring reliable signal amplification.

 

Usage Guide

 

Power Supply: Connect Vdd (Pin 1) to the positive power supply voltage.

RF Connections: Connect the RFin (Pin 4) to the RF input source and RFout (Pin 5) to the RF output destination.

Biasing: Apply the bias voltage Vbias (Pin 3) within the specified range for optimal performance.