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Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components
Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Absolute Maximum Ratings
| Item | Symbol | Rating | Unit |
| Drain to source voltage | VDSS | 100 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 10 | A |
| Drain peak current | ID(pulse)*1 | 40 | A |
| Body to drain diode reverse drain current | IDR | 10 | A |
| Channel dissipation | Pch*2 | 25 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | -50 to +150 | °C |
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
