Our factory can manufacture the 2 inch IC Prime grade siliconwafer with high quality and compeitive price
Diameter 2 inch
Growth Method CZ/FZ
Conductivity Type P/N
Dopant  B, P, AS
Resistivity: 0.001ohm-cm - 1ohm-cm, 1 - 1000 ohm-cm,1000 -10000ohm-cm
Thickness: Customization
Primary flat Customization
Crystal orientation: <100> <110> <111> orcustomization
Surface: No scratch, no saw mark, no chip, no stain
Single side/double sides polished
Packing Aluminum foil vacuum packing
Particle <10 & 0.3um/0.2um
roughness < 0.5nm
TTV < 4um
TIR < 4um
STIR < 4um
Bow < 20um
warp < 20um